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A Unique Technique for Nanoelectronic Components Durability

A new technique to reduce electro migration in nanoscale electron interconnects ubiquitous in state-of-the-art integrated circuits has been invented by the researchers of South Flordia’s University.

dmaterialThis was achieved by coating the copper metal interconnect with hexagonal boron nitride (hBN). It is an atomically thin, insulating two-dimensional (2-D) material that shares a structure similar to “amazing material” graphene.

Electromigration is the movement of atoms based on the flow of current through a material. If the current density is high enough, the heat dissipated within the material will repeatedly break atoms from the structure and move them.

This will create both ‘vacancies’ and ‘deposits’. The vacancies can grow and eventually break circuit connections resulting in open-circuits, while the deposits can grow and eventually close circuit connections resulting in short-circuit.

The existing solution to avoid electromigration is to ensure that wires with potential large current densities have proper widths to hold them. Due to chemical-mechanical polishing (CMP) effects which reduces the thickness of wires, a thinner wire may be able to hold a larger current density than a wider one. So there could be more than one ranges of EM compliant widths for a wire that has a large current density. Current density tables are typically used to calculate EM compliant widths.

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Nitisha Dubey

I am a Journalist with a post graduate degree in Journalism & Mass Communication. I love reading non-fiction books, exploring different destinations and varieties of cuisines. Biographies and historical movies are few favourites.

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