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Analog Devices’ New Silicon Switch Tailored for Next-gen Communications Infrastructure Trends

Analog Devices’ New Silicon Switch Tailored

Analog Devices’ new high power (44 watts peak) single-pole, double-throw (SPDT) silicon switch enables designers to slash hardware size and bias power consumption in cellular radio systems.

Touted to chant the pivotal communications infrastructure trends, the next-gen switch is compact and leverages high data usage performance through a high level of integration that eliminates the need for external components. The switch is also said to reduce power consumption to more efficient levels by operating on a single low-voltage supply with extremely low current consumption compared to existing pin-diode-based solutions.

The ADRF5130 is manufactured using silicon technology, and is housed in a small 4 mm × 4 mm LFCSP SMT package.

Other key nuggets

  • The ADRF5130 is specified at 0.7-GHz to 3.5-GHz frequency band with typical 0.6-dB insertion-loss, high isolation of 50 dB, excellent linearity of +68 dBm and peak power handling of 44 watts during continuous operation mode.
  • The device features robust 2000-V electro-static-discharge (ESD) protection on all device pins.
  • Comprises a fast CMOS-compatible control interface with switching time less than 1 us.
  • Additionally, a symmetrical circuit architecture allows the RF inputs to be used interchangeably in high power applications.

Pricing and Availability

Product Sample Availability Full Production Price Each per 1,000 Packaging
ADRF5130BCPZNowJuly 2016$10.044 mm × 4 mm LFCSP
ADRF5130-EVAL-ZN/AN/A1 unit @ $99.00Evaluation Board


BiS Team

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