Analog Devices’ new high power (44 watts peak) single-pole, double-throw (SPDT) silicon switch enables designers to slash hardware size and bias power consumption in cellular radio systems.
Touted to chant the pivotal communications infrastructure trends, the next-gen switch is compact and leverages high data usage performance through a high level of integration that eliminates the need for external components. The switch is also said to reduce power consumption to more efficient levels by operating on a single low-voltage supply with extremely low current consumption compared to existing pin-diode-based solutions.
The ADRF5130 is manufactured using silicon technology, and is housed in a small 4 mm × 4 mm LFCSP SMT package.
Other key nuggets
- The ADRF5130 is specified at 0.7-GHz to 3.5-GHz frequency band with typical 0.6-dB insertion-loss, high isolation of 50 dB, excellent linearity of +68 dBm and peak power handling of 44 watts during continuous operation mode.
- The device features robust 2000-V electro-static-discharge (ESD) protection on all device pins.
- Comprises a fast CMOS-compatible control interface with switching time less than 1 us.
- Additionally, a symmetrical circuit architecture allows the RF inputs to be used interchangeably in high power applications.
Pricing and Availability
|Product||Sample Availability||Full Production||Price Each per 1,000||Packaging|
|ADRF5130BCPZ||Now||July 2016||$10.04||4 mm × 4 mm LFCSP|
|ADRF5130-EVAL-Z||N/A||N/A||1 unit @ $99.00||Evaluation Board|