Mouser Electronics has now stocked the GS-EVB-HB-66508B-ON1 evaluation board from GaN Systems. The high-speed daughter board combines two 650 V GaN Systems gallium nitride (GaN) E-HEMTs and an ON Semiconductor NCP51820 gate driver to create a cost-effective half-bridge solution for new or existing off-line power converter designs.
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The GaN Systems GS-EVB-HB-66508B-ON1 evaluation board, available from Mouser Electronics, includes the ON Semiconductor NCP51820 gate driver, two GaN Systems GS66508B enhancement mode GaN-on-silicon power switches in a high-side/low-side configuration, and all necessary drive circuitry.
The NCP51820 offers short and matched propagation delays with advanced level shift technology plus separate, dedicated voltage regulators to protect the power switches’ gates against excessive voltage. The two GS66508B devices are bottom-side-cooled transistors that offer very low junction-to-case thermal resistance for demanding high power applications.
Combined on the GS-EVB-HB-66508B-ON1 board, the solution enables significant reductions in power losses, weight, size, and system costs. The 25 mm × 25 mm board can replace high-side/low-side driver and MOSFETs in existing power supplies and is ideal for applications such as AC-DC adapters, data center power supplies, PV inverters, energy storage systems, and bridgeless totem pole topologies.
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