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Graphene Helps Gallium Nitride Grow on Silicon for Hi-Tech Applications

Gallium Nitride

In a recent research paper, Graphenea demonstrated the use of graphene as an intermediary layer to grow GaN-on-silicon devices.

Semiconductors fabricated from third-group periodic table elements and nitrogen (III-nitride semiconductors) such as indium nitride (InN), aluminum nitride (AlN), and gallium nitride (GaN), exhibit exotic properties, attracting interest for a number of applications such as high-frequency and high-power transistors, laser diodes, and LEDs.


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Niloy Banerjee

A generic movie-buff, passionate and professional with print journalism, serving editorial verticals on Technical and B2B segments, crude rover and writer on business happenings, spare time playing physical and digital forms of games; a love with philosophy is perennial as trying to archive pebbles from the ocean of literature. Lastly, a connoisseur in making and eating palatable cuisines.

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