STMicroelectronics instigates a new family of high-voltage N-channel Power MOSFETs targeting automotive applications. The devices are AEC-Q101-qualified and built using ST’s state-of-the-art MDmesh DM2 super-junction technology with fast-recovery diode and features a breakdown voltage over the 400V-650V range and are housed in D2PAK, TO-220, and TO-247 packages.
All of these devices are tailored for automotive applications that require an integrated fast body diode, softer commutation behaviour, and back-to-back gate-source zener protection. They are ideal for full-bridge zero-voltage-switching topologies.
Eminent Technical Features
- Fast-recovery body diode
- Extremely low gate charge and input capacitance of 44nC and 1850pF, respectively, for a 500Vdevice in D2PAK
- Low on-resistance
- Best Reverse Recovery Time (Trr): 120ns @ 28A for a 600Vdevice in TO-247 and 135ns @ 48A for a 650Vdevice in TO-247
- Gate to Source zener-protected
Availability and Pricing
Prices in quantities of1,000 units range from US$3.0 to US$10.0, depending on breakdown voltage and package type.