Infineon Technologies has added another industry standard package to its CoolSiC™ MOSFET 1200 V module family. The proven 62 mm device has been designed in half-bridge topology and is based on the trench chip technology.
It opens up silicon carbide for applications in the medium power range starting at 250 kW – where silicon reaches the limits of power density with IGBT technology. Compared to a 62 mm IGBT module, the list of applications now additionally includes solar, server, energy storage, EV charger, traction, commercial induction cooking and power conversion systems.
The 62 mm module features Infineon’s CoolSiC MOSFETs, which enable a high current density. Very low switching and conducting losses minimize cooling efforts, whereas operating the device at high switching frequency allows for using smaller magnetic components. By implementing Infineon’s CoolSiC chip technology, it is possible to design smaller inverter designs for the application in terms of size, overall system costs can be reduced.
With a base plate and screw connections, the housing is characterized by a very robust mechanical design, which is optimized for highest system availability, a minimum of service cost and off-time losses. The outstanding reliability is made possible by high thermal cycling capability and a continuous operating temperature (Tvjop) of 150°C. The symmetrical internal design of the housing allows identical switching conditions for the upper and lower switch. As an option, the thermal performance of the module can be improved even further with pre-applied thermal interface Material (TIM).
The CoolSiC™ MOSFETs 1200 V in the 62 mm package come in variants of 6 mΩ/250 A, 3 mΩ/357 A, and 2 mΩ/500 A respectively. Designed for fast characterization (double pulse/continuous operation), an evaluation board is available for the devices. For ease of use, it offers a flexible adjustment of the gate voltage and gate resistors. At the same time, it can serve as a reference design for driver boards for series production.