Infineon Technologies has upgraded its level-shift EiceDRIVER portfolio with an 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology.
The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.
The level-shift gate driver 6ED2230 provides 350 mA / 650 mA source and sink drive capability. It prevents shoot-through thanks to the integrated dead time. The integrated over-current protection comparator with a+/-5 percent reference threshold accuracy provides fast, repeatable and reliable switch protection. The integrated bootstrap diodes offer ultra-fast reverse recovery with a very low typical resistance of 40 Ω.
Negative VS transient voltage immunity of -100 V with repeating 700 ns wide pulses supports superior robustness and reliable operation. The low and high side voltage supplies feature independent under-voltage lockout (UVLO) for safe operation. A unique DSO-24 footprint separates the low and high voltage on opposite sides of the package to further increase clearance and creepage.