Infineon Technologies and Cree have inked an agreement on the strategic long-term supply of silicon carbide (SiC) wafers. Infineon will be able to broaden its offering of SiC products to address today’s high-growth markets such as photovoltaic inverters and electro-mobility. The agreement with Cree covers only the supply of 150mm wafer diameter.
“We have known Cree for a long time as a strong and reliable partner with an excellent industry reputation,” said Reinhard Ploss, CEO of Infineon. “Based on the secured long-term supply of SiC wafers, we strengthen our strategic growth areas in automotive and industrial power control. As a consequence, we will create additional value for our customers.”
“Infineon is a longstanding, valuable commercial partner with an excellent reputation,” said Gregg Lowe, CEO of Cree. “This agreement validates the quality of Cree’s SiC wafer technology and our capacity expansion, as well as the accelerated adoption of SiC-based solutions that are critical to enabling faster, smaller, lighter and more powerful electronic systems.”
Semiconductors based on silicon carbide technology are the basis for most high-efficiency and disruptive system solutions in power conversion and in the electric car. Compared to silicon-based power semiconductors, SiC devices provide higher energy savings and higher system density from size reduction of the passive components. In the coming years, SiC products will expand into application fields such as robotics, industrial power supplies, traction and variable speed drives.