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Infineon Offers TRENCHSTOP IGBT7 Technology

Infineon Technologies has offered TRENCHSTOP IGBT7 technology in a discrete housing. The device comes in a TO-247 with 650 V break down voltage.

InfineonThe new TRENCHSTOP family portfolio consists of current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A. It can easily be used for replacing previous technologies and for paralleling.

This version of IGBT7 is especially suited to applications such as industrial motor drives, power factor correction, photovoltaic, and uninterruptible power supplies.

Based on the new micro-pattern trench technology, the TRENCHSTOP IGBT7 chip performs with much lower static losses. For the same current class, the on-state voltage is reduced by ten percent.

This feature brings significant loss reduction in the application, especially for industrial drives, which usually operate at moderate switching frequency.

The IGBT T7 technology has a very low saturation voltage (V CE(sat)) and is co-packed with an emitter controlled 7th generation (EC7) diode, which provides for a 150 mV lower forward voltage (V F) drop and improved reverse-recovery softness.

The device features superior controllability and excellent EMI performance. It can easily be adjusted to provide the application-specific best ratio of dv/dt and switching losses. The 650V TRENCHSTOP IGBT7 provides short circuit robustness as required in the applications.

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Nitisha Dubey

I am a Journalist with a post graduate degree in Journalism & Mass Communication. I love reading non-fiction books, exploring different destinations and varieties of cuisines. Biographies and historical movies are few favourites.

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