Infineon Unveils OptiMOS 7 15V Trench Power MOSFETs
Infineon Technologies has introduced its new OptiMOS™ 7 family, industry’s first 15 V trench power MOSFET technology. The OptiMOS 7 15 V series primarily targets optimized DC-DC conversion for servers, computing, datacenter, and artificial intelligence applications.
The product portfolio includes the latest PQFN 3.3 x 3.3 mm² Source-Down, with bottom- and dual-side cooling variants in standard- and center-gate footprints. The portfolio also includes a robust PQFN 2 x 2 mm² variant with a reinforced clip. The OptiMOS 7 15 V technology is specifically tailored for DC-DC conversions with low output voltages, particularly in server and computing environments. This advancement aligns with emerging shifts towards high ratio DC-DC conversion in data-center power distribution.
Compared to the established OptiMOS5 25 V, the new OptiMOS 7 15 V achieves a reduction of RDS(on) and FOMQg by ~30 percent, and FOMQOSS by ~50 percent by lowering the breakdown voltage. The PQFN 3.3 x 3.3 mm² Source-Down package variants provide a more versatile and effective PCB-design.
Furthermore, the PQFN 2 x 2 mm² package provides a pulsed current capability higher than 500 A and a typical RthJC of 1.6 K/W. By minimizing conduction and switching losses and incorporating advanced packaging technology, thermal management becomes easy and effective, setting new benchmarks both for power density and overall efficiency.
