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Infineon’s New 2EDN EiceDRIVER for MOSFETs Delivers functional robustness and low power dissipation

Infineon

Infineon Technologies launches the new 2EDN7524 EiceDRIVER ICs for the PFC, LLC and synchronous rectification stages of switch mode power supplies.

Enhancing the existing EiceDRIVER family, the 2EDN family is the crucial link between control ICs and MOSFET, e.g. CoolMOS C7, as well as GaN switching devices. The 2EDN MOSFET driver IC enables high system level efficiencies, excellent power density and consistent system robustness.

Specifications:

  • The 2EDN EiceDRIVER ICs come in industry standard 8-pin packages and feature two independent, non-isolated low-side channels, each capable of providing a 5 A source and sink peak current.
  • Both channels operate with typical rise and fall times of just 5 ns, while the excellent 1 ns channel-to-channel delay matching allows configuration of simultaneous switching to double the total drive current.
  • Despite the high current, the output stages offer a very low RDS(ON), minimizing power dissipation in the driver IC even if a very small or no external gate resistor is used.
  • Exceptional robustness against ground bounce for system reliability is ensured through the ability of the driver ICs to handle up to -10 VDC at the control and enable inputs.

Availability

Volume production of the 2EDN7524 MOSFET driver has started in a DSO package with an Under Voltage Lock Out (UVLO) of 4 V. An UVLO variant with 8 V and a TSSOP package in 4 and 8 V will be available in January 2016. The versions in WSON package with both 4 V and 8 V UVLO will be launched in a second wave in the first quarter 2016.

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