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Micron, Intel unveils 3D NAND Flash Memory


Micron Technology and Intel Corporation have announced the availability of their latest 3D NAND technology, the world’s highest-density flash memory.

Highlighted Points:

  1. 3D NAND technology uses floating-gate cells and allows the highest-density flash device ever developed—3times higher capacity than competing NAND technologies.
  2. Enables gum stick-sized SSDs with more than 3.5 TB of storage and standard 2.5-inch SSDs with greater than 10TB.
  3. Innovative process architecture techniques extend Moore’s Law for flash storage, fetching important improvements in density while lowering the cost of NAND flash.

“Micron and Intel’s collaboration has created an industry-leading solid-state storage technology that offers high density, performance and efficiency and is unmatched by any flash today,” said Brian Shirley, vice president of Memory Technology and Solutions at Micron Technology. “This 3D NAND technology has the potential to create fundamental market shifts. The depth of the impact that flash has had to date—from smartphones to flash-optimized supercomputing—is really just scratching the surface of what’s possible.”

“Intel’s development efforts with Micron reflect our continued commitment to offer leading and innovative non-volatile memory technologies to the marketplace,” said Rob Crooke, senior vice president and general manager, Non-Volatile Memory Solutions Group, Intel Corporation. “The significant improvements in density and cost enabled by our new 3D NAND technology innovation will accelerate solid-state storage in computing platforms.”

Key Features of 3D NAND design include:

  1. Large Capacities –3times the capacity of existing 3D technology—up to 48GB of NAND per die—enabling ¾ of TB to fit in a single fingertip-sized package.
  2. Reduced Cost per GB – First-gen 3D NAND is architected to achieve better cost efficiencies than planar NAND.
  3. Fast – High read/write bandwidth, I/O speeds and random read performance.
  4. Green – New sleep modes enable low-power use by cutting power to inactive NAND die (even when other die in the same package are active), dropping power consumption significantly in standby mode.
  5. Smart –New features improve latency and rise endurance over earlier generations, and also make system amalgamation easier.

Flash is the storage technology used inside the lightest laptops, fastest data centers, and nearly every cellphone, tablet and mobile devices. Jointly developed by Intel and Micron, the 256Gb MLC version of 3D NAND is sampling with selected partners on 30th March and the 384Gb TLC design will be sampling later this spring.

It’s worth mentioning that both the companies are also developing individual lines of SSD solutions based on 3D NAND technology which are expected to be available by next year.


BiS Team

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