Mitsubishi Electric Corporation will begin shipping samples of its LV100-type T-series 2.0kV insulated-gate bipolar transistor (IGBT) Module for industrial use this May.
The new power-semiconductor product is expected to downsize and reduce the power consumption of power-conversion equipment for use with renewable energy sources. Also, the product will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2022 in Nuremberg, Germany from May 10 to 12.
Power semiconductors for efficiently converting electric power are being increasingly utilized as key devices that can help to lower the carbon footprint of global society. At the same time, efficient power conversion through the deployment of increasingly higher system-operating voltages is being demanded for power grids that use renewable-energy power sources, which has led to the development of power converters rated at DC1500V, the upper limit of the EU’s Low Voltage Directive.1
Module samples that Mitsubishi Electric will start shipping soon have a blocking-voltage capability of 2.0kV, which is suitable for DC1500V power conversion equipment used mainly for large-capacity systems of several hundred kW to several MW, including renewable-energy power sources. Adopting 2.0kV withstand voltage semiconductors will enable customers to simplify the design of their DC1500V power-conversion equipment. Also, the latest 7th-generation IGBT and Relaxed Field of Cathode (RFC) diode will help to downsize and reduce the power consumption of power-conversion equipment for renewable-energy power supply. In addition, the module’s industrial LV100-type package, which is suitable for large-capacity systems due to its easy-paralleling configuration, will help to simplify large-capacity system designs.
- IGBT module with 2.0kV withstand voltage will downsize DC1500V power converters
- The new 2.0kV-rated IGBT simplifies the design of DC1500V-rated power converters, including for renewable-energy power sources, which are difficult to design using conventional 1.7kV-rated IGBTs.
- 7th-generation IGBT and RFC diode reduce power loss in power converters
- Latest (seventh-generation) IGBT with CSTBTTM3 structure and RFC diode optimized for high withstand voltage are suitable for high-voltage, lower-power-loss applications.
- Industrial LV100-type package will increase capacity of power-conversion systems
- The terminal layout is optimized for easy paralleling and flexible inverter configurations and capacities.
- Three AC main terminals help to spread and equalize current density for increased inverter capacity.
- Integrating the structure’s insulated and copper-base parts and optimizing the internal electrode structure increases thermal cycle life4 and lowers package inductance for enhanced reliability.