Mitsubishi Electric Develops GaN Amplifier for Mobile Base Stations
Mitsubishi Electric Corporation announced the development of the world’s first* ultra-wideband digitally controlled gallium nitride (GaN) amplifier, which is compatible with a world-leading range of sub-6GHz bands focused on fifth-generation (5G) mobile communication systems. With a power efficiency rating of above 40%, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations.
The Key Features of the GaN Amplifier include:
1) Novel load modulation achieves wideband operation and contributes to large-capacity communication
- Mitsubishi Electric’s novel ultra-wideband digitally controlled GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier’s high-efficiency operation, for wideband (1.4–4.8GHz) operation.
- Wide-band operation of amplifier supports several frequency bands.
2) Digital control realizes high-efficiency operation and reduces power consumption of mobile base stations
- Digitally controlled input signals for amplifier realize high-efficiency load modulation of above 40% over 110% of the fractional bandwidth. Digital control employs learning function based on Maisart
- Improved efficiency of amplifier helps to reduce power consumption in mobile base stations.
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