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Mitsubishi Electric to Ship Samples of EML Chip for Data Centers

Mitsubishi Electric has declared to begin shipping samples of its 100Gbps (53Gbaud) four-level pulse-amplitude modulation (PAM4) electro-absorption modulator (EML) laser diode chip used in data centers for coarse wavelength division multiplexing (CWDM) on November 1.

Mitsubishi The semiconductor diode is expected to be applied in sets of four EML chips as a light source in optical transceivers for 400Gbps optical fiber communication in data centers.

Thanks to the new EML’s operability in a wider range of temperatures, it will help to lower the power consumption and costs of optical transceivers by eliminating the need for conventional temperature-control units.

1) High-speed, wider-temperature operation with the unique hybrid waveguide structure

    • Unique hybrid waveguide structure combines a buried heterostructure laser diode for high optical-output power and a high-mesa waveguide electro-absorption modulator (EAM) for a high extinction ratio and wide frequency range.
    • 53Gbaud PAM4 operation is available in temperatures ranging from 5 to 85°C due to optimized design parameters for the laser diode and modulator sections.

2) Reduces power consumption and costs of optical transceivers

    • Operability in a wider temperature range eliminates the need for chip temperature control units in optical transceivers, thereby reducing both power consumption and costs.
    • By enabling low-power optical transceivers, helps to reduce power consumption in data centers.


Aishwarya Saxena

A book geek, with creative mind, an electronics degree, and zealous for writing.Creativity is the one thing in her opinion which drove her to enter into editing field. Allured towards south Indian cuisine and culture, love to discover new cultures and their customs. Relishes in discovering new music genres.

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