Mouser Electronics has now stocked UF3SC silicon carbide (SiC) FETs from UnitedSiC.
UnitedSiC UF3SC SiC FETs are based on a unique cascode circuit configuration that employs a normally on SiC JFET that is co-packaged with a silicon MOSFET to produce a normally off SiC FET device.
The UF3SC FETs feature standard gate-drive characteristics that allow a true drop-in replacement to silicon IGBTs and FETs, SiC MOSFETs, or silicon super-junction devices.
The UF3SC SiC FETs offer low intrinsic capacitance, ultra-low gate charge, and excellent reverse recovery.
The FETs offer maximum operating temperatures up to 175 degrees Celsius and are ideal for use in electric vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.
The UnitedSiC UF3SC SiC FETs are available in TO-247-3L packaging for faster switching and clean gate waveforms, or a low-profile DFN 8×8 surface-mount package that enables ultra-low R.
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