Mouser Electronics expands its inventory of QPD gallium nitride (GaN) radio frequency (RF) transistors announces on the go shipping of Qorvo’s high-electron-mobility transistors (HEMTs).
Built on Qorvo’s high-performance GaN on silicon carbide (SiC) technology, these HEMTs arms a single-stage matched power amplifier transistor.
The new devices offer a wide array of frequency ranges, output power, and operating voltages for high-efficiency applications.
- GaN technology supports RF power densities between five and six times higher than gallium arsenide-based RF amplifiers.
- This increase in performance capability offers designers the flexibility to reduce board space and system costs while improving system performance.
- The Qorvo QPD GaN RF transistors available from Mouser Electronics include the recently released QPD1003, the industry’s first 500-watt, L-Band power amplifier internally matched to 50 ohms.
- The new QPD1003 meets the performance needs of high-power phased arrays such as Active Electronic Scanned Array (AESA) radars, which operate in the 1.2 to 1.4 GHz frequency range. These systems require power amplifiers that operate at maximum efficiency resulting in low heat generation in demanding environmental conditions.
Key Applications include
The proven performance and reliability of GaN technology makes it an ideal choice for infrastructure, defense and aerospace applications such as radar, electronic warfare, communications, navigation, and similar applications.