Mouser Electronics has recently started distributing ferroelectric random-access memory (FRAM) and large-density resistive random access memory (ReRAM) products from Fujitsu Semiconductor Memory Solution.
Fujitsu FRAMs are new-generation non-volatile memories that meet engineers’ needs for higher read/write endurance, faster-writing speed, and lower power consumption compared to EEPROM.
Fujitsu FRAM is available from Mouser in both serial (SPI and I²C) and parallel interfaces and a wide range of compact, high-density package types. Memory size options are available from 4 Kbits up to 8 Mbits.
Fujitsu was the first company to start mass production of FRAM, in 1999. The company’s FRAM products can be found in many key applications, including automotive, industrial, medical and consumer products.
Featuring an SPI interface, Fujitsu ReRAM operates at a wide range of power supply voltages from 1.6 V to 3.6 V.
The EEPROM-compatible device features very low power consumption of just 0.15 mA in read state and 1.5 mA in write, which, combined with its 8-Mbit density, makes it ideal for small, battery-operated wearable devices such as hearing aids, smartwatches, and smart glasses.