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Mouser Offers Qorvo’s QPD0011 GaN-on-SiC HEMT

Mouser Electronics has now started stocking the QPD0011 high-electron-mobility transistor (HEMT) from Qorvo.

Mouser The gallium nitride-on-silicon carbide (GaN-on-SiC) transistor delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE, and WCDMA systems.

The Qorvo QPD0011, available from Mouser Electronics, is an asymmetric, dual-path amplifier in a small, 7.0 mm × 6.5 mm DFN package.

Utilizing variable power inputs from 30 W to 60 W and drain voltages of +48 V, the QPD0011 operates between 3.3 GHz and 3.6 GHz and features up to 13.3 dB of gain, for ultra-efficient signal, peak, and power performance (up to 90 W) in Doherty design environments.

For development, Mouser also stocks the QPD0011EVB1 Evaluation Board. The QPD0011EVB1 platform includes an example application circuit, allowing rapid prototyping when incorporated into existing designs.

Applications for the QPD0011 include macrocell and microcell base stations, active antennas, and asymmetric Doherty designs.

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Aishwarya Saxena

A book geek, with creative mind, an electronics degree, and zealous for writing.Creativity is the one thing in her opinion which drove her to enter into editing field. Allured towards south Indian cuisine and culture, love to discover new cultures and their customs. Relishes in discovering new music genres.

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