Mouser Electronics is now stocking the LMG5200 gallium nitride (GaN) power stage from Texas Instruments (TI).
The LMG5200 device delivers 25 percent lower power losses compared to silicon-based designs, enabling single-stage conversion and providing increased power density and efficiency in space-constrained, high-frequency industrial, telecom, and motor control applications.
The TI LMG5200 device, available from Mouser Electronics, is an 80 V, 10 A integrated GaN field-effect transistor (FET) power stage that consists of a high-frequency driver and two 15 milliohm GaN FETs in a half-bridge configuration.
The device significantly reduces electromagnetic interference (EMI) while increasing power-stage efficiency by minimizing packaging parasitic inductances in the critical gate-drive loop. The LMG5200 device features advanced multi chip packaging technology and is optimized to support power-conversion topologies with frequencies up to 5 MHz
The LMG5200 device’s transistor–transistor logic (TTL)-compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage.
This allows the inputs to be directly connected to the outputs of an analog PWM controller with up to 12 V power supply, eliminating the need for a buffer stage.
The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
Mouser is also stocking the LMG5200EVM-02 evaluation module, designed to provide engineers with a complete working power stage with an external PWM signal.
The board can be configured as a buck converter, boost converter, or other converter topology using a half bridge.
It can be used to evaluate the performance of the LMG5200 as a hard-switched converter to sample measurements such as efficiency, switching speed and voltage change over time (dV/dt).