Alliance Memory unveils a new family of high-speed CMOS pseudo SRAMs (PSRAMs). The new high-speed CMOS pseudo SRAMs (PSRAMs) comes with densities from 8Mb to 128Mb in 6.0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm by 4.0 mm by 1.0 mm 49-ball FPBGA packages.
Featuring high-density DRAM cores with SRAM interfaces and on-chip refresh circuits for refresh-free operation, the devices provide:
- High bandwidth and the low power necessary to replace SRAMs in portable electronics such as mobile phones and PDAs, or to serve as companion chips to burst NOR Flash applications.
- The interfaces of the AS1C1M16PL-70BIN, AS1C1M16P-70BIN, AS1C2M16P-70BIN, AS1C512K16PL-70BIN, and AS1C512K16P-70BIN are compatible with asynchronous type SRAMs.
- The AS1C4M16PL-70BIN and AS1C8M16PL-70BIN CellularRAM PSRAMs feature a multiplexed address/data bus for greater bandwidth.
- The devices support asynchronous and burst operation, and feature read or writes burst lengths of 4, 8, 16, or 32 words, or continuous burst.
- Available in industrial temperature ranges, the PSRAMs offer fast access speeds of 70s and operate from a single power supply of 1.7V to 1.95V or 2.6V to 3.3V.
Device Specification Table:
|Part number||Density||Organization||VCC Range (V)||Temp. (°C)||Package|
|AS1C512K16PL-70BIN||8Mb||512K x 16||1.7 to 1.95||-30 to +85||48-ball FPBGA|
|AS1C512K16P-70BIN||8Mb||512K x 16||2.6 to 3.3||-30 to +85||48-ball FPBGA|
|AS1C1M16PL-70BIN||16Mb||1M x 16||1.7 to 1.95||-40 to +85||48-ball FPBGA|
|AS1C1M16P-70BIN||16Mb||1M x 16||2.6 to 3.3||-40 to +85||48-ball FPBGA|
|AS1C2M16P-70BIN||32Mb||2M x 16||2.6 to 3.3||-40 to +85||48-ball FPBGA|
|AS1C4M16PL-70BIN||64Mb||4M x 16||1.7 to 1.95||-30 to +85||49-ball FPBGA|
|AS1C8M16PL-70BIN||128Mb||8M x 16||1.7 to 1.95||-30 to +85||49-ball FPBGA|
Additional power-saving features include auto temperature-compensated self-refresh (ATCSR), partial array self-refresh (PASR), and a deep power down (DPD) mode.
The devices combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions for wireless, automotive, networking, and industrial applications.
Samples and production quantities of the new PSRAMs will be available in November 2018, with lead times of eight weeks.
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