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New Door in the “Beyond CMOS” World

In a research article in Physical Review Letters, scientists explain how they created a metal oxide—the “MO” in “CMOS”—equipped with an additional important function. Instead of simply being a passive element of the on-off switch in a CMOS transistor, the new metal oxide activates electrical current flow all by itself. The finding could one day help move computing into an era often called “beyond CMOS.”

Beyond CMOSScientists have taken a common component of digital devices and endowed it with a previously unobserved capability, opening the door to a new generation of silicon-based electronic devices.

The oxide material creates current in nearby pure, “undoped” silicon, the workhorse semiconductor of the electronics industry. The conductivity in silicon takes place in a very thin region just nine atomic layers thick. You’d need to stack 100,000 such layers equal to the width of a human hair.


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Niloy Banerjee

A generic movie-buff, passionate and professional with print journalism, serving editorial verticals on Technical and B2B segments, crude rover and writer on business happenings, spare time playing physical and digital forms of games; a love with philosophy is perennial as trying to archive pebbles from the ocean of literature. Lastly, a connoisseur in making and eating palatable cuisines.

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