New MOTIX Gate Driver IC Integrates Power Management Unit
Infineon has introduced the MOTIX 3-phase gate driver IC 6ED2742S01Q. The 160 V silicon-on-insulator (SOI) gate driver features an integrated power management unit (PMU) and is available in a QFN-32 package with a thermally efficient exposed power pad.
This makes the easy-to-integrate device ideal for battery-powered industrial BLDC motor control drives including cordless power tools, robotics, drones, and light electric vehicles (LEVs).
The 6ED2742S01Q has integrated bootstrap diodes that power three external high-side bootstrap capacitors. Through a trickle charge pump, they support 100 percent duty cycle operation. Protection features include under-voltage lock-out, overcurrent protection with configurable threshold, fault communication, and automatic fault recovery. The output drivers integrate a high-pulse current buffer stage designed for minimal driver cross-conduction. In addition, a current sense amplifier (CSA) with selectable gain between the low-side supply voltage (VSS) and the low-side power ground return (COM) is integrated.
The MOTIX gate driver provides a 1 A source and 2 A sink current with independent under-voltage lock-out (UVLO) for both high-side and low-side gate drives. The device offers a propagation delay of 100 ns and a minimum dead time of 100 ns with built-in delay matching. As a result, the driver enables high switching frequencies with reduced level shift losses. The exposed pad of the QFN-32 provides very low thermal resistance, enabling reliable operation.
The MOTIX 6ED2742S01Q is rated for industrial temperature operation ranging from -40°C to 125°C and can easily drive OptiMOS™ and StrongIRFET™ MOSFETs in single or parallel combinations. It supports battery voltages from 10.8 V to 120 V.
Availability
The MOTIX 6ED2742S01Q can be ordered now in an industry-standard 5 x 5 mm² QFN-32 package with an exposed pad and a 2 kV HBM ESD rating.
