By navigating our site, you agree to allow us to use cookies, in accordance with our Privacy Policy.

NXP Stocks 2ⁿᵈ Generation RF Multi-Chip Modules

NXP Semiconductors has now been stocking its 2nd generation of comprehensive Airfast RF power Multi-Chip Modules (MCMs) designed to support the evolution of 5G mMIMO active antenna system requirements for cellular base stations.

nxpFocused on accelerating the coverage of 5G, the new all-in-one power amplifier module family is based on NXP’s latest LDMOS technology that offers higher output power, extended frequency coverage, and higher efficiency—all within the same footprint as NXP’s previous generation of MCMs.

“NXP’s latest multi-chip modules provide an efficiency boost resulting from the latest enhancements to LDMOS and enhanced integration,” said Paul Hart, Executive Vice President and General Manager of NXP’s Radio Power. “Our aggressive drive for integration brings more features into each module, which means fewer components for our customers to source assemble and test. The result is a higher power yet more cost-effective, compact design. This translates into faster time to market for our customers and mobile network operators who are tackling the need for 5G expansion.”

The new AFSC5G26E38 Airfast module is a prime example of the increased performance delivered in the 2nd generation MCM family. The device delivers 20% more output power compared to the previous generation, addressing the need for broader 5G coverage per base station tower, without increasing the radio unit size. It also features a power-added efficiency of 45%, 4 points higher than the previous generation for an overall reduction in the 5G network electricity consumption.

Highlighting the performance of NXP’s latest LDMOS generation in high frequencies, the new AFSC5G40E38 addresses the 5G C-band from 3.7 to 4.0 GHz and has recently been selected by NEC Rakuten Mobile in Japan.

NXP’s RF power Multi-Chip Modules include LDMOS ICs, paired with an integrated Doherty splitter and combiner and a 50-ohm in/outmatching. This high level of integration removes RF complexities and eliminates multiple prototypes passes, while the reduction of component count helps improve yields and decrease qualification cycle time.

The 2nd generation complements the initial series released last year, extending the frequency and power levels. Both generations share the same pin-out format to enable RF designers to quickly scale from one design to another, reducing overall development time.

Tags

Aishwarya Saxena

A book geek, with creative mind, an electronics degree, and zealous for writing.Creativity is the one thing in her opinion which drove her to enter into editing field. Allured towards south Indian cuisine and culture, love to discover new cultures and their customs. Relishes in discovering new music genres.

Related Articles