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Renesas’ Plastic Packaged, PWM Controller and GaN FET Driver

Intersil

Renesas Electronics Corporation brings to the space industry, plastic-packaged, radiation-tolerant PWM controller and Gallium Nitride (GaN) FET driver for DC/DC power supplies in small satellites (smallsats) and launch vehicles, as per the company in its latest release.

The ISL71043M single-ended current mode PWM controller and ISL71040M low-side GaN FET driver are ideal for isolated flyback and half-bridge power stages, and motor control driver circuits in satellite buses and payloads. Private ‘new space’ companies have begun launching smallsats to form large constellations operating in multiple low Earth orbit (LEO) planes. Smallsat mega-constellations provide global broadband Internet links, as well as high-resolution Earth observation imaging for sea, air, and land asset tracking.

The ISL71043M PWM controller provides fast signal propagation and output switching in a small 4mm x 5mm SOIC plastic package, reducing PCB area up to 3x compared to competitive ceramic packages.

The GaN FET Driver (ISL71040M) ensures reliable operation when driving GaN FETs by precisely controlling the gate driver voltage to +3/-5% over temperature and radiation. It also includes floating protection circuitry to eliminate unintentional switching.

“The ISL71043M and ISL71040M along with our GaN FETs and digital isolators give customers a size and cost optimized power supply solution for large constellations of smallsats,” said Philip Chesley, Vice President, Industrial Analog and Power Business Division, Renesas Electronics Corporation. “Renesas’ radiation-tolerant plastic package flow and cutting-edge IC technology provides the optimal cost and radiation performance new space customers demand for 5-year mission profiles in low Earth orbit.”

ISL71043M PWM Controller’s Key Features Comprises of:

  • Operating supply range of 9V to 13.2V
  • 5mA (max) operating supply current
  • ±3% current limit threshold
  • Integrated 1A MOSFET gate driver
    • 35ns rise and fall times with 1nF output load
  • 5MHz bandwidth error amplifier

The Major Features of ISL71040M Low Side GaN FET Driver

  • Operating supply range of 4.5V to 13.2V
  • Internal 4.5V regulated gate drive voltage
  • Independent outputs to adjust rise and fall time
  • High 3A/2.8A sink/source capability
    • 3ns rise/3.7ns fall times with 1nF output load
  • Internal undervoltage lockout (UVLO) on the gate driver

The ISL71043M PWM controller and ISL71040M GaN FET driver can be combined with the ISL73024SEH 200V GaN FET or ISL73023SEH 100V GaN FET, and ISL71610M passive-input digital isolator to create a variety of power stage configurations.

Availability

The ISL71043M radiation-tolerant PWM controller is available now in an 8-lead 4mm x 5mm SOIC package, and the ISL71040M radiation-tolerant low-side GaN FET driver is available in an 8-lead 4mm x 4mm TDFN package.

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Jyoti Gazmer

A Mass Comm. graduate believes strongly in the power of words. A book lover who dreams to own a library some day. An introvert but will become your closest friend if you share mutual feelings about COFFEE. I prefer having more puppies over humans.

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