ROHM’s new lineup of PrestoMOS series is the R60xxJNx series, of 600V super junction MOSFETs that includes 30 new models. This series increases design flexibility while maintaining, what according to ROHM is industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).
Recent studies have revealed that close to 50% of the total power demand worldwide is used to drive motors, and with the continued spread of electrical appliances in emerging and developing countries, the numbers are expected to only increase. Lately, the trends towards improving energy savings have driven the demand in a variety of applications for MOSFETs with reduced power consumption during steady state operation.
To meet this need, the company had launched the PrestoMOS series of power MOSFETs earlier in 2012. This series features the industry’s fastest reverse recovery characteristics, achieving lower power consumption. As compared with ROHM’s conventional products, this new series leverages our proprietary lifetime control technology to achieve ultra-fast trr. This enables a reduction in a power loss of about 58% at light loads when compared with IGBT implementations.
Additionally, raising the reference voltage needed to turn ON the MOSFET prevents self turn-ON, which is one of the main causes of loss. Furthermore, optimizing the characteristics of the built-in diode allows improving the soft recovery index specific to super junction MOSFETs, which reduces noise that can lead to malfunctions. Eliminating these barriers to circuit optimization provides customers with greater design flexibility.
Keys to Improving Design Flexibility
Switching speed increase, self turn-ON, and noise generation are conflicting phenomena, making it necessary for customers to optimize circuitry by adjusting the gate resistance and other factors during circuit design. Unlike general-purpose MOSFETs, ROHM’s R60xxJNx series takes measures against noise and self turn-ON, providing customers a great degree of design freedom.
- Implementing self turn-ON countermeasures minimize loss
Optimizing the parasitic capacitance inherent within the MOSFET structure allowed us to reduce unintended gate voltage during switching by 20%. In addition, the specialized design makes it difficult for self turn-ON to occur by increasing the threshold voltage (Vth) necessary for turning ON the MOSFET by 1.5x. This expands the loss adjustment range due to gate resistance and other factors implemented by the customer.
2. Improving recovery characteristics reduces noise
Generally, the recovery characteristics of the super junction MOSFET’s internal diode shows hard recovery. However, by optimizing the internal structure, ROHM’s R60xxJNx series is able to improve the soft recovery index by 30% over conventional products and succeed in reducing noise while maintaining the industry’s fastest reverse recovery time (trr). This makes it easy for customers to adjust noise (i.e. due to gate resistance).
The Key Applications include:
- industrial equipment (i.e. charging stations)
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