Samsung Electronics in its latest statement announced that it has completed the development of its 5-nanometer (nm) FinFET process technology & is now ready for customers’ samples. The addition of a cutting-edge node to its extreme ultraviolet (EUV)-based process offerings, will provide Samsung leadership in the advanced foundry market.
According to the company, the 5nm FinFET process technology compared to 7nm provides up to a 25 percent increase in logic area efficiency with 20 percent lower power consumption or 10 percent higher performance as a result of process improvement to enable them to have more innovative standard cell architecture.
In addition to power performance area (PPA) improvements from 7nm to 5nm, customers can fully leverage Samsung’s highly sophisticated EUV technology. Like its predecessor, 5nm uses EUV lithography in metal layer patterning and reduces mask layers while providing better fidelity.
Another key advantage of 5nm is that all the 7nm intellectual property (IP) can be reused in 5nm which means that customers making a transition from 7nm to will greatly benefit from reduced migration costs, pre-verified design ecosystem, and consequently shorten their 5nm product development.
As a result of the close collaboration between Samsung Foundry and its ‘Samsung Advanced Foundry Ecosystem (SAFE) partners, a robust design infrastructure for Samsung’s 5nm, including the process design kit (PDK), design methodologies (DM), electronic design automation (EDA) tools, and IP, has been provided since the fourth quarter of 2018. Besides, Samsung Foundry has already started offering 5nm Multi-Project Wafer (MPW) service to customers.
“In successful completion of our 5nm development, we’ve proven our capabilities in EUV-based nodes,” said Charlie Bae, Executive Vice President of Foundry Business at Samsung Electronics. “In response to customers’ surging demand for advanced process technologies to differentiate their next-generation products, we continue our commitment to accelerating the volume production of EUV-based technologies.”
Earlier in October 2018, Samsung had announced the readiness and its initial production of 7nm process, its first process node with EUV lithography technology. The company has provided commercial samples of the industry’s first EUV-based new products and has started mass production of 7nm process early this year.
Considering the various benefits including PPA and IP, Samsung’s EUV-based advanced nodes are expected to be in high demand for new and innovative applications such as 5G, artificial intelligence (AI), high-performance computing (HPC), and automotive. Leveraging our robust technology competitiveness including our leadership in EUV lithography, the company intends to continue to deliver the most advanced technologies and solutions to customers
Samsung foundry’s EUV-based process technologies are currently being manufactured at the S3-line in Hwaseong, Korea.
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