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ST Fosters SiC Power Device Focus, Loops Cree in Multi-Year SiC Wafer Supply Agreement

Agreement between Cree and ST to boost commercial expansion of SiC in automotive and industrial applications

STMicroelectronics

Cree announces to have inked a multi-year agreement with ST to produce and supply its Wolfspeed silicon carbide (SiC) wafers.

Aimed at tapping the demand of SiC power devices, the agreement governs the supply of a quarter billion dollars of Cree’s advanced 150mm silicon carbide bare and epitaxial wafers to STMicroelectronics.

 “ST is the only semiconductor company with automotive-grade silicon carbide in mass production today, and we want to press forward to grow our SiC business both in terms of volume and breadth of applications served, targeting leadership in a market estimated at more than $3B in 2025,” said Jean-Marc Chery, president and CEO of STMicroelectronics. “This agreement with Cree will improve our flexibility, sustain our ambition and plans, and contribute to boosting the pervasion of SiC in automotive and industrial applications.”

“We remain focused on increasing the adoption of silicon carbide-based solutions, and this agreement is a testament to our mission,” said Gregg Lowe, CEO of Cree. “This is the third multi-year agreement that we have signed this past year in support of the industry’s transition from silicon to silicon carbide. As the world leader in silicon carbide, Cree continues to expand capacity to meet the growing market needs, particularly in industrial and automotive applications. We are extremely pleased to continue to support STMicroelectronics as we both invest to accelerate this market.”

Wolfspeed, A Cree Company, is the global leader in the manufacture of silicon carbide wafers and epitaxial wafers. The supply agreement enables silicon carbide applications in the broad automotive and industrial markets.

Further info: www.st.com, www.cree.com

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