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Infineon Paves Path for 5G Technology Unveils GaN Devices for Mobile Base Station Transmitters

Infineon

Infineon Technologies unveils its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year’s European Microwave Week. The devices allow manufacturers of mobile base stations to build smaller, more powerful and more flexible transmitters. With higher efficiency, improved power density and more bandwidth than currently used RF power transistors, the new devices improve the economics of building infrastructure to support today’s cellular networks. Additionally, they will pave the way for the transition to 5G technology with higher data volumes and thus, enhanced user-experience.

Commenting on the new rollout, Gerhard Wolf, Vice President and General Manager of Infineon’s RF Power product line said, “This new device family combines innovation with knowledge of the application requirements for cellular infrastructure to provide our global customer base with next-generation RF power transistors. They allow significant improvement in the operating performance and reduction in size of the transmitter side of mobile base stations.” “Additionally, with the transition to wide bandgap semiconductor technology, we are setting the pace for the continued evolution of the cellular infrastructure.”

Eminent Features

  • The new RF power transistors leverage the performance of GaN technology to achieve ten percent higher efficiency and five times the power density of the LDMOS transistors commonly used today.
  • This translates to smaller footprints and power requirements for the power amplifiers (PA) of base station transmitters in use today, which operate in either the 1.8-2.2 GHz or 2.3-2.7 GHz frequency range.
  • Future GaN on SiC devices will also support 5G cellular bands up to the 6 GHz frequency range.
  • This roadmap allows Infineon to build on its long-standing expertise and state-of-the-art production technologies for RF transistor technology.

Design flexibility and support for the next-generation of 4G technology are additional benefits of GaN devices for RF power applications. The new devices have twice the RF bandwidth of LDMOS, so that one PA can support multiple operating frequencies.

They also have increased instantaneous bandwidth available for transmitters, which lets a carrier offer higher dates using the data aggregation technique specified for 4.5G cellular networks.

Availability

Engineering samples and reference designs are available to customers under specific Non-Disclosure Agreements (NDA).

Infineon at European Microwave Week (EuMW)

Infineon is showcasing its RF power transistor technology at Booth C309, in Hall Ternes during EuMW in Paris, September 6-11, 2015.

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Niloy Banerjee

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