As per the latest study by Fact.MR, the global market for SiC & GaN power semiconductor is likely to experience strong growth during 2017-2026.
The global introduction of 5G mobile communication is one of the key factors driving the global market for SiC & GaN power semiconductor.
Hence, companies are constantly finding ways to introduce GaN-based power amplifier with high speed.
With the rise in electric vehicles, automotive electronics is also a prominent market for power semiconductors as deployment of SiC & GaN power semiconductor in cars has sparked.
The global market for SiC & GaN power semiconductor is also estimated to bring in US$ 2,986.3 million revenue.
Introduction of technically advanced devices with better power capacity is driving the market for SiC & GaN power semiconductor.
SiC The Next Material For Semiconductor
Compared to Gallium Nitride (GaN), silicon carbide (SiC) is likely to emerge as the highly preferred material. By 2026 end, SiC is estimated to surpass US$ 2,400 million revenue.
Silicon Carbide is helping devices to achieve high energy conversion function, power consumption, and fast charging.
SiC power semiconductor devices are being used in devices with high power capacity. Whereas, GaN is used in medium to low power capacity.
Discrete SiC Power Devices to Gain Maximum Traction in the Market
On the basis of components, discrete SiC power devices are likely to gain traction in the market from 2017 to 2026.
Discrete SiC power devices are estimated to surpass US$ 1,900 million revenue towards 2026 end.
Meanwhile, SiC power modules are also likely to achieve strong growth through 2026.
SiC power devices are emerging as the most viable option for next-generation semiconductor elements due to its high frequency, high voltage performance and high temperature.
Power supplies are estimated to create an incremental opportunity above US$ 700 million between the forecast period from 2017 to 2026.