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STMicroelectronics Unveils 3D Depth Image Sensors

The VD55H1 sensor is now available for lead customers to sample. Volume production maturity is scheduled for the second half of 2022.

STMicroelectronics (ST) has launched a new family of high-resolution Time-of-Flight sensors that bring advanced 3D depth imaging to smartphones and other devices.

STMicroelectronics Depth Image SensorThe 3D family debuts with the VD55H1.

“The innovative VD55H1 3D depth sensor reinforces ST’s leadership in Time-of-Flight, and complements our full range of depth-sensing technologies,” said Eric Aussedat, ST’s Executive VP, Imaging Sub-Group General Manager. “The FlightSense™ portfolio now comprises direct and indirect ToF products from single-point ranging all-in-one sensors to sophisticated high-resolution 3D imagers enabling future generations of intuitive, smart, and autonomous devices.”

This sensor maps three-dimensional surfaces by measuring the distance to over half a million points.

Objects can be detected up to five meters from the sensor, and even further with patterned illumination. VD55H1 addresses emerging AR/VR market use cases including room mapping, gaming, and 3D avatars.

In smartphones, the sensor enhances the performance of camera-system features including bokeh effect, multi-camera selection, and video segmentation.

In robotics, the VD55H1 provides high-fidelity 3D scene mapping for all target distances to enable new and more powerful capabilities.

Indirect time-of-flight (iToF) sensors, such as VD55H1, calculate the distance to objects by measuring the phase shift between the reflected signal and the emitted signal.

This is a complementary technique to direct time of flight (dToF) sensors, which measure the time for transmitted signals to be reflected by the sensor.

ST’s broad portfolio of advanced technologies enables the Company to design both direct and indirect high-resolution ToF sensors, and offer optimized solutions tailored to application requirements.

VD55H1’s unique pixel architecture and fabrication process, leveraging in-house 40nm stacked wafer technology, ensures low power consumption, low noise, and optimized die area. The die contains 75% more pixels than existing VGA sensors, within a smaller die size.

The VD55H1 sensor is now available for lead customers to sample. Volume production maturity is scheduled for the second half of 2022.

A reference design and complete software package are available to help accelerate sensor evaluation and project development.

Featuring a 672 x 804 back-side illuminated (BSI) pixel array for iToF depth sensing, the VD55H1 is the first sensor of its type in the industry.


Aishwarya Saxena

A book geek, with creative mind, an electronics degree, and zealous for writing.Creativity is the one thing in her opinion which drove her to enter into editing field. Allured towards south Indian cuisine and culture, love to discover new cultures and their customs. Relishes in discovering new music genres.

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