ST Purviews on LDMOS Technology Signs License and Cooperation Agreement with Innogration
The agreement with Innogration expands the range of applications that ST can address with LDMOS technology and serviceable RF power market for ST
STMicroelectronics has signed an agreement on LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power technology with Innogration Technologies.
Innogration Technologies specializes in the design and manufacturing of RF power semiconductor devices, modules, and sub-system assemblies.
This mature and proven technology is sought to be very well suited for applications such as wireless infrastructure; industrial, scientific, and medical; avionics and radar; and non-cellular radio
Combining a short conduction-channel length with a high breakdown voltage, LDMOS devices are well suited for RF power amplifiers where they can be used in base stations for wireless communications systems, as well as in the power amplifiers for commercial and industrial systems. The agreement with Innogration expands the range of applications that ST can address with LDMOS technology and serviceable RF power market for ST.
Terms of the agreements were not disclosed.
