STMicroelectronics (ST) has ramped up the efficiency minimizing switching power losses with new MDmesh K6 800V STPOWER MOSFET.
The new super-junction STPOWER MDmesh K6 series enhances several key parameters to minimize system-power losses.
“We have tested and evaluated samples of the new Super Junction Very High Voltage MDmesh K6 series and have noted and been very impressed with the outstanding Rdson area and Total Gate charge (Qg) performance characteristics,” said Luca Colombo, CTO and R&D Manager, TCI, an Italian solid-state lighting innovator.
It is especially suited to lighting applications based on flyback topology, such as LED drivers, HID lamps, as well as adapters, and power supplies for flat-panel displays.
With the 800V STPOWER MDmesh K6 series, ST sets a benchmark for this super-junction technology combining best-in-class performance with ease of use.
MDmesh K6, with the best RDS (on) x area at 800V currently available in the market, allows compact new designs that combine high power density with market-leading efficiency.
In addition, the K6 series has a reduced threshold voltage compared with the previous MDmesh K5 generation, enabling a lower driving voltage and thus reducing power losses and gaining efficiency mainly for zero-watt standby applications. The total gate charge (Qg) is also very low, permitting high switching speeds and low losses.
An integrated ESD protection diode increases the overall ruggedness of the MOSFET up to Human Body Model (HBM) Class 2.
The STP80N240K6 (RDS (on)max = 0.22Ω, Qgtyp = 25.9nC) in TO-220 through-hole package, is the first MDmesh K6 MOSFET in full production with free samples already available at ST eSTore.
The DPAK and TO-220FP versions will be in full production by January 2022.
The complete MDmesh K6 product portfolio will be introduced by 2022 and will offer a wide RDS(on) range from 0.22Ω to 4.5Ω and a range of package options including SMD and through-hole housings.