With the introduction of its third generation of STPOWER silicon-carbide (SiC) MOSFETs1, STMicroelectronics strengthens the state-of-the-art in power devices for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria.
With the acceleration of the EV market, many carmakers and automotive suppliers are now embracing 800V drive systems to achieve much faster charging and help reduce EV weight. These new systems allow car makers to produce vehicles with longer driving ranges.
ST’s new SiC devices are specifically optimized for these high-end automotive applications including EV traction inverters, on-board chargers, and DC/DC converters, as well as e-climate compressors. The new generation also suits industrial applications by boosting the efficiency of motor drives, renewable-energy converters and storage systems, as well as telecom and data-center power supplies.
ST has completed the qualification of the third-generation SiC technology platform and expects to move most of the derivative products to commercial maturity by the end of 2021.
“We continue to drive this exciting technology forward with innovations at both the device and package levels. As a fully integrated SiC products manufacturer, we are able to deliver continued improved performance to our customers,” said Edoardo Merli, Power Transistor Macro-Division General Manager and Group Vice President of STMicroelectronics’ Automotive and Discrete Group. “We are investing relentlessly to support our automotive and industrial programs expected to generate $1 billion in SiC revenue in 2024.”
Leveraging the new third-generation SiC platform, ST’s latest planar MOSFETs set new industry-leading benchmarks for the accepted figures-of-merits (FoMs) [on-resistance (Ron) x die size, and Ron x gate charge (Qg)] that express transistor efficiency, power density, and switching performance. Bettering FoMs using ordinary silicon technology has become increasingly difficult and, as a result, SiC technology holds the key to further improvement. ST is setting the pace of progress with its third-generation devices.
Devices with nominal voltage ratings from 650V and 750V up to 1200V will be available, giving more choices for designers to address applications operating from ordinary AC-line voltages up to those of high-voltage EV batteries and chargers.
The first products available are the 650V SCT040H65G3AG, priced at $5.00 and a 750V device in die form (datasheet and quotation upon request).
To know more about ST’s SiC portfolio and the latest third-generation MOSFETs: www.st.com/sic-mosfets