gallium-nitride high-electron-mobility transistors (GaN HEMTs)
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Mitsubishi Electric Adds New Ku-band GaN HEMTs
Mitsubishi Electric Corporation has added two new 13.75-14.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) to the company’s…
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