gallium-nitride high-electron-mobility transistors (GaN HEMTs)

Mitsubishi Electric Adds New Ku-band GaN HEMTs

Mitsubishi Electric Corporation has added two new 13.75-14.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) to the company’s…