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Texas Instruments Announces New Portfolio of Ready-to-Use GaN FET power Devices

Backed by 20 million hours of device reliability testing, high-voltage GaN FET with integrated driver and protection doubles power density in industrial and telecom applications.

telecom applications

Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW.

The LMG341x family from Texas Instruments enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom, and personal electronics applications.

Backed by 20 million hours of device reliability testing, high-voltage GaN FET with integrated driver and protection doubles power density in industrial and telecom applications

TI’s family of GaN FET devices provides a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies. With integrated <100-ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.

The Key Features and Benefits of TI’s LMG3410R050, LMG3410R070, and LMG3411R070 include:

  • Smaller, more efficient solutions: TI’s integrated GaN power stage doubles power density and reduces losses by 80 percent compared to silicon metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Each device is capable of fast, 1-MHz switching frequencies and slew rates of up to 100 V/ns.
  • System reliability: The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing. Additionally, each device provides integrated thermal and high-speed, 100-ns overcurrent protection against shoot-through and short-circuit conditions.
  • Devices for every power level: Each device in the portfolio offers a GaN FET, driver and protection features at 50 mΩ or 70 mΩ to provide a single-chip solution for applications ranging from sub-100 W to 10 kW.

Package, availability, and pricing
These devices are available now in the TI store in 8-mm-by-8-mm split-pad, quad flat no-lead (QFN) packaging. The LMG3410R050, LMG3410R070 and LMG3411R070 are priced at US$18.69, $16.45 and $16.45, respectively, in 1,000-unit quantities.

Visit TI at electronica

Texas Instruments is showcasing a 10-kW cloud-enabled grid link demonstration in Hall C4 – Booth 131 at electronica at Messe München in Germany, Nov. 13-16, 2018. Developed jointly by TI and Siemens, the active demonstration uses TI’s LMG3410R050 600-V GaN FET with integrated driver and protection, enabling engineers to achieve 99 percent efficiency and up to 30 percent reduction in power component size compared to a traditional silicon design.

For more information, Click here

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Jyoti Gazmer

A Mass Comm. graduate believes strongly in the power of words. A book lover who dreams to own a library some day. An introvert but will become your closest friend if you share mutual feelings about COFFEE. I prefer having more puppies over humans.

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