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TI introduces 1.2-mm2 FemtoFET 60-V N-channel power MOSFET with industry’s best resistance


Texas Instruments (TI) announces the introduction of a new 60-V N-channel power FemtoFET power transistor touted to provide the industry’s lowest resistance that is 90 percent below traditional 60-V load switches, reducing power loss in end-systems.

Offered in a tiny 1.53-mm-by-0.77-mm silicon-based package that has an 80 percent smaller footprint than load switches in SOT-23 packages – The CSD18541F5 metal-oxide semiconductor field-effect transistor (MOSFET) maintains a typical on-resistance (Rdson) of 54-m  and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications.

The tiny land grid array (LGA) package features a 0.5-mm pitch between pads for easy mounting.

The CSD18541F5 expands TI’s NexFET technology portfolio of FemtoFET MOSFETs to include higher voltages and manufacturing-friendly footprints.

CSD18541F5 key features and benefits

  • Ultra-low 54-mΩ of Rdson at 10-V gate-to-source (VGS) is 90 percent less than traditional 60-V load switches, providing lower power loss.
  • Ultra-small 1.53-mm-by-0.77-mm-by-0.35-mm LGA package is 80 percent smaller than a traditional load switch in a SOT-23 package, reducing printed circuit board (PCB) board space.
  • Manufacturing-friendly 0.5-mm pad pitch.
  • Integrated electrostatic discharge (ESD) protection diode safeguards the MOSFET gate from over voltage.

Availability, packaging and pricing

Available in volume now from TI and its authorized distributors, the CSD18541F5 is packaged in a 3-pin LGA package and priced at US$0.14 in 1,000-unit quantities.

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