The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. The IGBT combines the insulated gate technology of the MOSFET with the output performance characteristics of a conventional bipolar transistor. The result of this hybrid combination is that the IGBT Transistor has the output switching and conduction characteristics of a bipolar transistor but is voltage-controlled like a MOSFET. The advantage gained by the insulated gate bipolar transistor device over a BJT or MOSFET is that it offers greater power gain than the standard bipolar type transistor combined with the higher voltage operation and lower input losses of the MOSFET. The IGBT is suitable for many applications in power electronics, especially in Pulse Width Modulated (PWM) servo and three-phase drives requiring high dynamic range control and low noise. It also can be used in Uninterruptible Power Supplies (UPS), Switched-Mode Power Supplies (SMPS), and other power circuits requiring high switch repetition rates. The main advantages of IGBT are it has a very low on-state voltage drop due to conductivity modulation and has superior on-state current density. So smaller chip size is possible and the cost can be reduced. With its lower on-state resistance and conduction losses as well as its ability to switch high voltages at high frequencies without damage makes the Insulated Gate Bipolar Transistor ideal for driving inductive loads such as coil windings, electromagnets, and DC motors. Increasing demand for electric vehicle and aggrandized need for high voltage operating devices have led to the higher adoption of IGBT in energy & power, automotive, consumer electronics, and industries.
The IGBT is suitable for many applications in power electronics, especially in Pulse Width Modulated (PWM) servo and three-phase drives requiring high dynamic range control and low noise. It also can be used in Uninterruptible Power Supplies (UPS), Switched-Mode Power Supplies (SMPS), and other power circuits requiring high switch repetition rates.
Increasing demand for electric vehicle and aggrandized need for high voltage operating devices have led to the higher adoption of IGBT in energy & power, automotive, consumer electronics, and industries. Therefore, the global IGBT market is expected to witness a moderate growth in the near future owing to high-speed switching rate and optimized power loss. However, current leakage at high temperature hampers the market growth.
The global IGBT market is segmented into type, power rating and application. On the basis of the type, the segment is further divided into discrete IGBT and IGBT module. On the basis of the power rating, the segment is further classified into low power, medium power, and high power applications. IGBT can be found in various applications such as consumer electronics, energy and power, motor drivers and many more.
We present to you BIS Chart Busters: Top 10 IGBT Module Manufacturers 2020
Infineon Technologies one of the first names touts in the semiconductor space has also been a prime provider IGBT module. IGBT Discretes, power modules and even stack solutions in different voltage- and current classes. Through Infineon IGBT product selection customers can get a broad variety of different devices. Infineon IGBTs address a wide range of applications in the field of automotive, traction, industrial and consumer systems. Infineon IGBTs can withstand voltages up to 6.5 kV and operate at a switching frequency from 2 kHz to 50 kHz. With Infineon wide technology portfolio, the industrial and power control IGBTs is designed for a superior current capability and a higher pulse load capacity for an ultra low power consumption.
GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors has a healthy offering of IGBTs in its pocket. The portfolio of GeneSiC Semiconductors includes variable offerings in the IGBT space. Lately, its extensive focus into SiC offerings has opened a new market opportunity for GeneSiC Semiconductors. One of the latest offerings include, SiC Schottky/Si IGBT mini-modules (Co-packs) by GeneSiC. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices.
ROHM has been catering in the IGBT space for long. ROHM’s IGBT portfolio is wide and has an extensive offer to cater to the current power electronics demand. ROHM’s IGBT, Insulated Gate Bipolar Transistor, achieves higher efficiency and has energy-saving capabilities matching a wide range of high voltage and high current applications. With core precision and high-reliability capabilities, ROHM IGBT’s is a prime choice for customers.
Focusing to provide solutions for high voltage, high power applications, Microsemi is a leading player in IGBT space. Microsemi has a lot to offer through its IGBT offering. Microsemi provides IGBT of high quality meeting various power needs. Microsemi IGBTs switching frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application.
ON Semiconductor has been a vital company in the semiconductor space. The company has a massive product portfolio to which its IGBT offerings is comprehensive. ON Semiconductor IGBTs can be used in vast range of high power applications. With innovation at core, ON Semiconductor IGBT Modules are used in traction and in the DC-AC stages of solar inverters, energy storage systems, uninterruptible power supplies and motor drives.
Powerex offering in the power semiconductor space is unavoidable. Powerex is a prime manufacture of IGBTs. The company, Powerex has a lot to offer in the IGBT space. The Powerex IGBT/HVIGBT line-up of Powerex self-manufactured devices employ CSTBT (Carrier Stored Trench-Gate Bipolar Transistor) technology. Powerex IGBTs supports less power loss and miniaturization tailored for industrial applications. Powerex HVIGBTs and HV diodes, feature highly insulating housings. Powerex IGBTs offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications.
Microchip is well known for its IGBT and MOSFET drivers. Complementing the IGBT technology, Microchip has a MOSFET driver, a power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an Insulated-Gate Bipolar Transistor (IGBT) or power MOSFET. Microchip’s diverse array of MOSFET drivers supports a wide range of applications ranging from DC/DC power supplies to a host of motor applications, all while promoting high design flexibility, system efficiency, and robust operation.
Vishay’s IGBT modules are available with several different configurations, including half-bridge, full-bridge, chopper, and 6PAK inverter. Vishay IGBTs has a wide collector current range, up to 200 A. Vishay has half-bridge and single-switch IGBT power modules. Also, customers can find IGBT Modules (600 V, 650 V and 1200 V, 50 A to 250 A) in SOT-227 Package. Don’t forget to check out their extensive IGBT offerings and portfolio meeting current power market demands.
ST offers a comprehensive portfolio of IGBTs (Insulated Gate Bipolar Transistors). ST’s IGBTs range from 300 to 1250 V, both in planar punch-through (PT) and trench-gate field-stop (TFS) technologies. IGBTs are belonging to the STPOWER™ family. ST’s IGBTs are suitable for industrial and automotive segments in applications such as general-purpose inverters, motor control, home appliances, HVAC, UPS/SMPS, welding equipment, induction heating, solar inverters, traction inverters, on-board chargers & fast chargers. ST IGBTs are available as bare die as well as packaged discrete components.