Toshiba Materials has announced that it will open a second production facility for silicon nitride substrates in Oita, Oita Prefecture.
The company will make a major investment in an existing facility through a 10 billion yen (approx. US$91 million) program that will run until March in 2023. Production at the new plant is expected to start in July 2021.
Silicon nitride substrates offer the advantages of excellent thermal conductivity and durability. They are positioned to meet growing demand for heat dissipation and insulation components for power semiconductors, driven by the concern to cut power consumption by automobiles and industrial equipment. Alongside the need to meet growing demand, Toshiba Materials recognizes that natural disasters have increased in their frequency and impact in recent years, and can seriously disrupt production and supply chains.
The new plant will play a key role in the company’s business continuity planning. Toshiba Materials will set up the second production facility in premises on the site of Japan Semiconductor Corporation’s Oita Operations. On completion of the first phase, the plant will have a production capacity is about 40,000 m2 / year, which the company will gradually increase in line with demand growth.
Production at the current plant in Yokohama, Kanagawa Prefecture, will also continue. Toshiba Materials will continue to take forward-looking measures that ensure its ability to provide stable supply of high-quality products, and to contribute to the realization of automobiles and industrial equipment that consume considerably less energy.
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