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Vishay Rolls Out New N-Channel MOSFETs

To save board space, MOSFETs can also be used in place of two PowerPAK SO-8 devices in parallel.

Vishay Intertechnology has released two new n-channel TrenchFET® MOSFETs that increase power density, efficiency, and board-level reliability in telecom and industrial applications.

Vishay MOSFETsTo achieve these design goals, the 60 V SiJH600E and 80 V SiJH800E combine ultra-low on-resistance with the high-temperature operation to +175 °C and high continuous drain current handling.

Their space-saving PowerPAK® 8x8L package promotes board-level reliability with its bond wireless construction and gullwing leads for mechanical stress relief.

The ultra-low on-resistance of the SiJH600E and SiJH800E — 0.65 mΩ and 1.22 mΩ typical at 10 V, respectively — is 54 % and 52 % lower than same-generation devices in the PowerPAK SO-8. This translates into energy savings by minimizing power losses due to conduction.

For increased power density, the SiJH600E and SiJH800E deliver continuous drain current of 373 A and 288 A, respectively, in a package that is 60 % smaller and 57 % thinner than the D²PAK.

To save board space, MOSFETs can also be used in place of two PowerPAK SO-8 devices in parallel.

With high-temperature operation to +175 °C, the Vishay Siliconix devices released provide ruggedness and reliability for synchronous rectification in power supplies, motor drive control, battery management, and power tool applications.

Lead (Pb)-free, halogen-free, and RoHS-compliant, the devices are 100 % Rg and UIS tested.

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Aishwarya Saxena

A book geek, with creative mind, an electronics degree, and zealous for writing.Creativity is the one thing in her opinion which drove her to enter into editing field. Allured towards south Indian cuisine and culture, love to discover new cultures and their customs. Relishes in discovering new music genres.

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