Gallium Nitride (GaN) has shown the potential to overpass traditional silicon devices. With growing power semiconductor applications in connected world, GaN seems to be the prime technology to herald the beacon of future technology.
Latest report affirms that the global gallium nitride (GaN) semiconductor devices market is expected to reach USD 4.37 billion by 2025.
Various properties, such as high breakdown voltage, wider band gap, large critical electric field, and high thermal conductivity, enable GaN devices to operate at higher voltages, high-power density, and high switching frequencies and to offer improved power efficiency over pure silicon-based devices.
Latest findings from Grand View Research reveals that The GaN radio frequency devices segment is expected to grow at the highest CAGR 20.4% from 2017 to 2025. This can be primarily attributed to the growing demand for these products in varied applications across automotive, healthcare, consumer electronics, and defense & aerospace sectors, among others.
Whereas, the 6 inch wafer segment is anticipated to experience grow with the highest CAGR of 21.8% from 2017 to 2025, owing to the benefit of precise current control and voltage supply.
Asia Pacific regional market is anticipated to emerge as the fastest growing region, owing to the surge in demand for efficient and high-performance RF components, noted the report.
GaN-based semiconductors are also promoting their application in the defense industry.
Moreover, the growing expenditure and investment in the defense sectors of developed as well as developing countries are presumed to further drive the industry growth. Moreover, the growing demand for Internet-of-Things (IoT) is increasing the demand for GaN-based semiconductor devices, due to additional benefits, such as wider bandgap, large electric filed, and high breakdown voltage, offered by them.
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