YAGEO XSemi Offers Surface-Mount N- and P-Channel MOSFETs
A MOSFET (metal oxide semiconductor field effect transistor) is a voltage-controlled field effect transistor that uses metal oxide gate electrodes. YAGEO XSemi’s power MOSFETs (also known as power transistors) feature low on-resistance and high switching speeds for various applications, including analog and digital circuits. Available packages are widely used for commercial and industrial surface mount applications.
Unlike BJTs, MOSFETs are electrically isolated from the current carrying channel, helping to lower the power draw from the device. MOSFETs operate in three voltage regions: triode, saturation, and cutoff.
YAGEO XSemi’s MOSFET series offers a range of features designed for diverse applications. The MOSFETs come in a surface mount package and are RoHS compliant and halogen-free. They are characterized by low gate charge and can operate at a maximum temperature of +150°C.
The N-channel MOSFETs support a drain-source voltage from 20 V to 700 V and can handle up to 300 A drain current at VGS @ 10 V.
The P-channel MOSFETs have a similar voltage range and current capability. The series also includes dual N-channel MOSFETs with a 100 V drain-source voltage and up to 2.1 A drain current.
Asymmetric N-channel MOSFETs are available with a 30 V drain-source voltage and up to 85 A drain current. Additionally, the complementary N- and P-channel MOSFETs cover drain-source voltages of 16 V, 30 V, and 100 V, with up to 12 A drain current.
